Characterization of silicon tunnel field effect transistor based on charge plasma

The aim of the proposed paper is an analytical model and realization characteristics for tunnel field-effect transistor (TFET) based on charge plasma (CP). One most applications TFET device which operates CP technique biosensor. CP-TFET to be used as effective detect uncharged molecules bio-sample solution. Charge one some techniques that recently invited induce carriers inside devices. In this we use a high work function in source (ϕ=5.93 eV) hole charges lower drain (ϕ=3.90 electron charges. Many electrical characterizations are considered study performance like current (ID) versus voltage gate (Vgs), ION/IOFF ratio, threshold (VT) transconductance (gm), sub-threshold swing (SS). signification comes into view enhancement device. Results show dielectric (K=12), oxide thickness (Tox=1 nm), channel length (Lch=42 higher (ϕ=4.5 tend best silicon characterization.